Infineon HEXFET N-Channel MOSFET, 110 A, 60 V TO-263 IRFS7540TRLPBF
- RS Stock No.:
- 257-9440
- Mfr. Part No.:
- IRFS7540TRLPBF
- Brand:
- Infineon
Subtotal (5 units, in packs of 5)*
Kr. 105,98
(exc. VAT)
Kr. 132,48
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 755 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | Kr. 21,196 | Kr. 105,98 |
*price indicative
- RS Stock No.:
- 257-9440
- Mfr. Part No.:
- IRFS7540TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Maximum Power Dissipation Pd | 160W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Maximum Power Dissipation Pd 160W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET N-Channel MOSFET 60 V TO-263
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
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- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-263
- Infineon HEXFET N-Channel MOSFET 60 V TO-263
- Infineon HEXFET N-Channel MOSFET 60 V TO-263
- Infineon HEXFET N-Channel MOSFET 60 V TO-263