Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.23 230 00 

(exc. VAT)

Kr.29 040 00 

(inc. VAT)

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5000 +Kr. 4,646Kr. 23 230,00

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RS Stock No.:
258-3876
Mfr. Part No.:
IPG20N06S2L35AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

55V

Package Type

TDSON

Series

OptiMOS

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Larger source lead frame connection for wire bonding and same thermal and electrical performance as a DPAK with the same die size.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature


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