Infineon HEXFET Type N-Channel MOSFET, 140 A, 75 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 262-6728
- Mfr. Part No.:
- IRF3808PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 262-6728
- Mfr. Part No.:
- IRF3808PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. This design has additional features such as 175°C operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
Repetitive avalanche allowed up to Tjmax
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