Microchip VN2406 Type N-Channel MOSFET, 1 A, 240 V MOSFET, 3-Pin TO-92 VN2406L-G

RS Stock No.:: 264-8945
Mfr. Part No.:: VN2406L-G
Brand:: Microchip

Microchip VN2406 Type N-Channel MOSFET, 1 A, 240 V MOSFET, 3-Pin TO-92 VN2406L-G

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.92 66

(exc. VAT)

Kr.115 825

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

840 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	Kr. 18,532	Kr. 92,66
50 - 95	Kr. 18,166	Kr. 90,83
100 - 245	Kr. 11,44	Kr. 57,20
250 - 495	Kr. 11,256	Kr. 56,28
500 +	Kr. 10,982	Kr. 54,91

*price indicative

RS Stock No.:: 264-8945
Mfr. Part No.:: VN2406L-G
Brand:: Microchip

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	240V
	Package Type	TO-92
	Series	VN2406
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	MOSFET
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 240V
	Package Type TO-92
	Series VN2406
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode MOSFET
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VN2406L-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VN2406 Type N-Channel MOSFET, 1 A, 240 V MOSFET, 3-Pin TO-92 VN2406L-G

FREE delivery for online orders over 500,00 kr

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