STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel SGT120R65AL

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Subtotal (1 pack of 2 units)*

Kr.33 52 

(exc. VAT)

Kr.41 90 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48Kr. 16,76Kr. 33,52
50 - 98Kr. 16,36Kr. 32,72
100 - 248Kr. 15,90Kr. 31,80
250 - 998Kr. 15,50Kr. 31,00
1000 +Kr. 15,10Kr. 30,20

*price indicative

Packaging Options:
RS Stock No.:
265-1035
Mfr. Part No.:
SGT120R65AL
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

750V

Series

G-HEMT

Package Type

Reel

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

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