Vishay SIS Type N-Channel MOSFET, 69.4 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- RS Stock No.:
- 268-8341
- Mfr. Part No.:
- SIS184LDN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr.23 373 00
(exc. VAT)
Kr.29 217 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 6 000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 7,791 | Kr. 23 373,00 |
*price indicative
- RS Stock No.:
- 268-8341
- Mfr. Part No.:
- SIS184LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0054Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0054Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Related links
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin 1212-8 SIS9446DN-T1-GE3
- Vishay Quad Silicon Dual N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3