Vishay SQ4840CEY Type N-Channel MOSFET, 20.7 A, 40 V Enhancement, 8-Pin SO-8 SQ4840CEY-T1_GE3
- RS Stock No.:
- 268-8357
- Mfr. Part No.:
- SQ4840CEY-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.94 72
(exc. VAT)
Kr.118 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 2 430 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 18,944 | Kr. 94,72 |
| 50 - 95 | Kr. 17,138 | Kr. 85,69 |
| 100 - 245 | Kr. 13,316 | Kr. 66,58 |
| 250 - 995 | Kr. 13,088 | Kr. 65,44 |
| 1000 + | Kr. 8,694 | Kr. 43,47 |
*price indicative
- RS Stock No.:
- 268-8357
- Mfr. Part No.:
- SQ4840CEY-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQ4840CEY | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.012Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 7.1W | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQ4840CEY | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.012Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 7.1W | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
Related links
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin SO-8 SQ4840CEY-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin SO-8 SQ4850CEY-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin SO-8SW SQRS140ELP-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin 8 x 8L SQJQ936EL-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin SO-8L SQJ740EP-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay Dual Silicon N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3