Infineon CoolGaN Power Transistor, 15 A, 600 V Enhancement, 8-Pin PG-LSON-8-1 IGLD60R070D1AUMA3
- RS Stock No.:
- 273-2749
- Mfr. Part No.:
- IGLD60R070D1AUMA3
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 273-2749
- Mfr. Part No.:
- IGLD60R070D1AUMA3
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolGaN | |
| Package Type | PG-LSON-8-1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolGaN | ||
Package Type PG-LSON-8-1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge
Related links
- Infineon GaN MOSFET 600 V, 8-Pin HSOF IGT60R070D1ATMA4
- Infineon GaN MOSFET 600 V, 20-Pin DSO IGO60R070D1AUMA2
- Infineon CoolGaN N-Channel MOSFET 600 V, 8-Pin LSON-8 IGLD60R190D1AUMA3
- Infineon IGLR65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R045CPAFKSA1
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N050HATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N031HATMA1
