Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPD18P06PGBTMA1

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Subtotal (1 reel of 2500 units)*

Kr.14 445 00 

(exc. VAT)

Kr.18 055 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 5,778Kr. 14 445,00

*price indicative

RS Stock No.:
273-2831
Mfr. Part No.:
SPD18P06PGBTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-18.6A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO252-3

Series

SPD18P06P G

Mount Type

Surface

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

80W

Forward Voltage Vf

1.33V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 68-1, RoHS, AEC Q101

Width

40 mm

Height

1.5mm

Length

40mm

Automotive Standard

AEC-Q101

The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.

RoHS compliant

Avalanche rated

Pb free lead plating

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