Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS Stock No.:
- 273-7553
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.77 18
(exc. VAT)
Kr.96 475
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 480 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 15,436 | Kr. 77,18 |
| 10 - 20 | Kr. 13,636 | Kr. 68,18 |
| 25 - 95 | Kr. 13,384 | Kr. 66,92 |
| 100 - 245 | Kr. 10,914 | Kr. 54,57 |
| 250 + | Kr. 10,80 | Kr. 54,00 |
*price indicative
- RS Stock No.:
- 273-7553
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPP18P06P-H | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 81.1W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.33V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-41-690 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPP18P06P-H | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 81.1W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.33V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-41-690 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
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