Infineon OptiMOS Type P-Channel MOSFET, 6.5 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD25DP06NMATMA1

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Subtotal (1 reel of 2500 units)*

Kr.6 277 50 

(exc. VAT)

Kr.7 847 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 2,511Kr. 6 277,50

*price indicative

RS Stock No.:
273-3005
Mfr. Part No.:
IPD25DP06NMATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

28W

Typical Gate Charge Qg @ Vgs

10.6nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit

Easy interface to MCU

Improved efficiency at low loads due to low Qg

Fast switching

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