Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD900P06NMATMA1

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Subtotal (1 reel of 2500 units)*

Kr.10 032 50 

(exc. VAT)

Kr.12 540 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 4,013Kr. 10 032,50

*price indicative

RS Stock No.:
273-3011
Mfr. Part No.:
IPD900P06NMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-16.4A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

-27nC

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in mediu

Easy interface to MCU

Fast switching

Avalanche ruggedness

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