Infineon OptiMOS Type P-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD40DP06NMATMA1

Subtotal (1 reel of 2500 units)*

Kr.7 105 00 

(exc. VAT)

Kr.8 880 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 2,842Kr. 7 105,00

*price indicative

RS Stock No.:
273-3007
Mfr. Part No.:
IPD40DP06NMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

19W

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit

Easy interface to MCU

Improved efficiency at low loads due to low Qg

Fast switching

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