Vishay SiR Type P-Channel MOSFET, 60.6 A, 40 V Enhancement, 8-Pin SO-8 SIR4409DP-T1-RE3

Subtotal (1 reel of 3000 units)*

Kr.18 114 00 

(exc. VAT)

Kr.22 644 00 

(inc. VAT)

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3000 +Kr. 6,038Kr. 18 114,00

*price indicative

RS Stock No.:
279-9939
Mfr. Part No.:
SIR4409DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

60.6A

Maximum Drain Source Voltage Vds

40V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

59.5W

Typical Gate Charge Qg @ Vgs

126nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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