Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

Subtotal (1 reel of 3000 units)*

Kr.24 816 00 

(exc. VAT)

Kr.31 020 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 8,272Kr. 24 816,00

*price indicative

RS Stock No.:
279-9952
Mfr. Part No.:
SIR5623DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

37.1A

Maximum Drain Source Voltage Vds

60V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.024Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

59.5W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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