Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr.53 42 

(exc. VAT)

Kr.66 775 

(inc. VAT)

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  • 5 945 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 10,684Kr. 53,42
50 - 95Kr. 7,986Kr. 39,93
100 - 245Kr. 7,092Kr. 35,46
250 - 995Kr. 6,978Kr. 34,89
1000 +Kr. 6,842Kr. 34,21

*price indicative

Packaging Options:
RS Stock No.:
279-9949
Mfr. Part No.:
SIR5211DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0062Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

158nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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