Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3
- RS Stock No.:
- 279-9956
- Mfr. Part No.:
- SIR5808DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.94 04
(exc. VAT)
Kr.117 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 000 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 18,808 | Kr. 94,04 |
| 50 - 95 | Kr. 16,222 | Kr. 81,11 |
| 100 - 245 | Kr. 14,438 | Kr. 72,19 |
| 250 - 995 | Kr. 14,14 | Kr. 70,70 |
| 1000 + | Kr. 13,912 | Kr. 69,56 |
*price indicative
- RS Stock No.:
- 279-9956
- Mfr. Part No.:
- SIR5808DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00735Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00735Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay Silicon N-Channel MOSFET 80 V, 8-Pin SO-8 SIR5808DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 40 V, 8-Pin SO-8 SIRS4400DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 60 V, 8-Pin SO-8 SIRS4600DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5110DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5112DP-T1-RE3
- Vishay Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5108DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3