Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3

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Subtotal (1 pack of 2 units)*

Kr.88 55 

(exc. VAT)

Kr.110 688 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48Kr. 44,275Kr. 88,55
50 - 98Kr. 33,235Kr. 66,47
100 - 248Kr. 29,515Kr. 59,03
250 - 998Kr. 28,945Kr. 57,89
1000 +Kr. 28,485Kr. 56,97

*price indicative

Packaging Options:
RS Stock No.:
279-9973
Mfr. Part No.:
SIRS5800DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

80V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

122nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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