Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

RS Stock No.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

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Subtotal (1 unit)*

Kr.62 35

(exc. VAT)

Kr.77 94

(inc. VAT)

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In Stock

192 unit(s) ready to ship
Plus 1 759 unit(s) shipping from 02. januar 2026

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Units	Per unit
1 - 9	Kr. 62,35
10 - 24	Kr. 54,91
25 - 49	Kr. 51,02
50 - 99	Kr. 48,05
100 +	Kr. 44,16

*price indicative

RS Stock No.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	290A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	360nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	520W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	20.7mm
	Length	15.87mm
	Standards/Approvals	No
	Width	5.31 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 290A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 360nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 520W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 20.7mm
	Length 15.87mm
	Standards/Approvals No
	Width 5.31 mm
	Automotive Standard No

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