Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRL7833PBF
- RS Stock No.:
- 688-7193
- Mfr. Part No.:
- IRL7833PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.47 84
(exc. VAT)
Kr.59 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 620 unit(s) shipping from 05. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 23,92 | Kr. 47,84 |
| 20 - 48 | Kr. 22,71 | Kr. 45,42 |
| 50 - 98 | Kr. 21,68 | Kr. 43,36 |
| 100 - 198 | Kr. 20,365 | Kr. 40,73 |
| 200 + | Kr. 19,16 | Kr. 38,32 |
*price indicative
- RS Stock No.:
- 688-7193
- Mfr. Part No.:
- IRL7833PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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