Infineon HEXFET Type N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220 IRF1405ZPBF

View all MOSFETs

Subtotal (1 tube of 5 units)*

Kr.148 94 

(exc. VAT)

Kr.186 175 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 25 unit(s) ready to ship
  • Plus 1 250 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
5 +Kr. 29,788Kr. 148,94

*price indicative

Packaging Options:
RS Stock No.:
865-5734
Mfr. Part No.:
IRF1405ZPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

16.51mm

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

Distrelec Product Id

304-37-848

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links