Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRLB8743PBF
- RS Stock No.:
- 725-9325
- Mfr. Part No.:
- IRLB8743PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.54 30
(exc. VAT)
Kr.67 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 105 unit(s) ready to ship
- Plus 5 145 unit(s) shipping from 08. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 10,86 | Kr. 54,30 |
| 50 - 120 | Kr. 9,242 | Kr. 46,21 |
| 125 - 245 | Kr. 7,482 | Kr. 37,41 |
| 250 - 495 | Kr. 7,026 | Kr. 35,13 |
| 500 + | Kr. 6,516 | Kr. 32,58 |
*price indicative
- RS Stock No.:
- 725-9325
- Mfr. Part No.:
- IRLB8743PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-308 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-308 | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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