Vishay SUP85N10-10P Type N-Channel MOSFET, 85 A, 100 V Enhancement, 3-Pin TO-220 SUP85N10-10-GE3
- RS Stock No.:
- 708-5178
- Mfr. Part No.:
- SUP85N10-10-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
Kr.72 87
(exc. VAT)
Kr.91 09
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 22 unit(s) shipping from 29. desember 2025
- Plus 1 unit(s) shipping from 29. desember 2025
- Plus 375 unit(s) shipping from 05. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 72,87 |
| 10 - 49 | Kr. 70,70 |
| 50 - 99 | Kr. 67,04 |
| 100 - 249 | Kr. 64,06 |
| 250 + | Kr. 60,63 |
*price indicative
- RS Stock No.:
- 708-5178
- Mfr. Part No.:
- SUP85N10-10-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SUP85N10-10P | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SUP85N10-10P | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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