Vishay Si2308BDS Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-GE3
- RS Stock No.:
- 710-3257
- Mfr. Part No.:
- SI2308BDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.103 54
(exc. VAT)
Kr.129 42
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Being discontinued
- Plus 40 unit(s) shipping from 29. desember 2025
- Final 540 unit(s) shipping from 05. januar 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 5,177 | Kr. 103,54 |
| 200 - 480 | Kr. 3,89 | Kr. 77,80 |
| 500 - 980 | Kr. 3,627 | Kr. 72,54 |
| 1000 - 1980 | Kr. 3,118 | Kr. 62,36 |
| 2000 + | Kr. 2,58 | Kr. 51,60 |
*price indicative
- RS Stock No.:
- 710-3257
- Mfr. Part No.:
- SI2308BDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | Si2308BDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.192Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.66W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series Si2308BDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.192Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.66W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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