DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 850 mA, 100 V Enhancement, 8-Pin SOIC ZXMHC10A07N8TC

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Subtotal (1 pack of 5 units)*

Kr.65 63 

(exc. VAT)

Kr.82 04 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 13,126Kr. 65,63
50 +Kr. 11,302Kr. 56,51

*price indicative

Packaging Options:
RS Stock No.:
751-5332
Mfr. Part No.:
ZXMHC10A07N8TC
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

100V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

1.36W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.95V

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Full Bridge

Length

5mm

Standards/Approvals

RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0

Width

4 mm

Height

1.5mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
CN

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


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