MPN

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin ZXMHC3A01T8TA

RS Stock No.:: 823-1877
Mfr. Part No.:: ZXMHC3A01T8TA
Brand:: DiodesZetex

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin ZXMHC3A01T8TA

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.123 55

(exc. VAT)

Kr.154 45

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

865 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 10	Kr. 24,71	Kr. 123,55
15 - 45	Kr. 22,08	Kr. 110,40
50 - 245	Kr. 19,586	Kr. 97,93
250 - 495	Kr. 16,932	Kr. 84,66
500 +	Kr. 14,712	Kr. 73,56

*price indicative

RS Stock No.:: 823-1877
Mfr. Part No.:: ZXMHC3A01T8TA
Brand:: DiodesZetex

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	30V
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	330mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.7W
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	3.9nC
	Forward Voltage Vf	0.95V
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Standards/Approvals	MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020
	Length	6.7mm
	Height	1.6mm
	Width	3.7 mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 30V
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 330mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.7W
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 3.9nC
	Forward Voltage Vf 0.95V
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020
	Length 6.7mm
	Height 1.6mm
	Width 3.7 mm
	Number of Elements per Chip 4
	Automotive Standard No

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin ZXMHC3A01T8TA

FREE delivery for online orders over 500,00 kr

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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