DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin ZXMHC3A01T8TA
- RS Stock No.:
- 823-1877
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.98 84
(exc. VAT)
Kr.123 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 860 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | Kr. 19,768 | Kr. 98,84 |
| 15 - 45 | Kr. 17,672 | Kr. 88,36 |
| 50 - 245 | Kr. 15,676 | Kr. 78,38 |
| 250 - 495 | Kr. 13,542 | Kr. 67,71 |
| 500 + | Kr. 11,762 | Kr. 58,81 |
*price indicative
- RS Stock No.:
- 823-1877
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 330mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.95V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | |
| Length | 6.7mm | |
| Height | 1.6mm | |
| Width | 3.7 mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 330mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.95V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | ||
Length 6.7mm | ||
Height 1.6mm | ||
Width 3.7 mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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