DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC

Subtotal (1 reel of 2500 units)*

Kr.13 162 50 

(exc. VAT)

Kr.16 452 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 5,265Kr. 13 162,50

*price indicative

RS Stock No.:
169-0719
Mfr. Part No.:
ZXMHC6A07N8TC
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.2nC

Maximum Power Dissipation Pd

1.36W

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Transistor Configuration

Full Bridge

Maximum Operating Temperature

-55°C

Width

4 mm

Length

5mm

Height

1.5mm

Standards/Approvals

UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
CN

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


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