DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
922-7888
Mfr. Part No.:
ZXMHC6A07T8TA
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

425mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

3.2nC

Forward Voltage Vf

0.85V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20, +20V

Maximum Operating Temperature

+150°C

Transistor Configuration

Full Bridge

Width

3.7mm

Standards/Approvals

J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0

Length

6.7mm

Height

1.6mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
DE

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy