DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

Subtotal (1 pack of 2 units)*

Kr.33 86 

(exc. VAT)

Kr.42 32 

(inc. VAT)

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2 +Kr. 16,93Kr. 33,86

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Packaging Options:
RS Stock No.:
669-7461
Mfr. Part No.:
ZXMHC6A07T8TA
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

425mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Forward Voltage Vf

0.85V

Typical Gate Charge Qg @ Vgs

3.2nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.7W

Transistor Configuration

Full Bridge

Maximum Operating Temperature

-55°C

Standards/Approvals

J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0

Length

6.7mm

Width

3.7 mm

Height

1.6mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
DE

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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