Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Brand:
- DiodesZetex
340 In stock for same day dispatch
Added
Price Each (In a Pack of 10)
Kr. 10,743
(exc. VAT)
Kr. 13,429
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 20 | Kr. 10,743 | Kr. 107,43 |
| 30 - 120 | Kr. 8,199 | Kr. 81,99 |
| 130 - 620 | Kr. 6,477 | Kr. 64,77 |
| 630 - 1240 | Kr. 5,844 | Kr. 58,44 |
| 1250 + | Kr. 5,199 | Kr. 51,99 |
| *price indicative | ||
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Brand:
- DiodesZetex
Legislation and Compliance
Product Details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.5 A, 7.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 40 mΩ, 80 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.5 W |
| Transistor Configuration | Full Bridge |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Width | 3.95mm |
| Typical Gate Charge @ Vgs | 11.4 nC @ 10 V, 11.7 nC @ 10 V |
| Length | 4.95mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 4 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Brand:
- DiodesZetex