Vishay Si2318CDS N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3
- RS Stock No.:
- 787-9036
- Distrelec Article No.:
- 304-02-276
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Brand:
- Vishay
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Add 200 more to save Kr. 82,40
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Kr. 140,60
(exc. VAT)
Kr. 175,80
(inc. VAT)
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- 980 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 180 | Kr. 7,03 | Kr. 140,60 | - |
| 200 - 480 | Kr. 6,618 | Kr. 132,36 | Kr. 82,40 |
| 500 - 980 | Kr. 5,978 | Kr. 119,56 | Kr. 526,00 |
| 1000 - 1980 | Kr. 5,623 | Kr. 112,46 | Kr. 1 407,00 |
| 2000 + | Kr. 5,28 | Kr. 105,60 | Kr. 3 500,00 |
*price indicative
- RS Stock No.:
- 787-9036
- Distrelec Article No.:
- 304-02-276
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | Si2318CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series Si2318CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
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