Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23 SI2319CDS-T1-GE3

Subtotal (1 pack of 10 units)*

Kr. 53,54

(exc. VAT)

Kr. 66,92

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 90 unit(s) shipping from 01 June 2026
  • Plus 30 unit(s) shipping from 01 June 2026
  • Plus 20 550 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +Kr. 5,354Kr. 53,54

*price indicative

Packaging Options:
RS Stock No.:
787-9042
Mfr. Part No.:
SI2319CDS-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

40V

Series

Si2319CDS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

108mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

13.6nC

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.02mm

Standards/Approvals

No

Automotive Standard

No

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• DC/DC Converter

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy