Vishay Si1308EDL Type N-Channel Power MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-323 Si1308EDL-T1-GE3
- RS Stock No.:
- 787-9121
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.92 45
(exc. VAT)
Kr.115 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Plus 400 unit(s) shipping from 29. desember 2025
- Plus 25 unit(s) shipping from 29. desember 2025
- Final 12 125 unit(s) shipping from 05. januar 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | Kr. 3,698 | Kr. 92,45 |
| 250 - 600 | Kr. 2,768 | Kr. 69,20 |
| 625 - 1225 | Kr. 2,407 | Kr. 60,18 |
| 1250 - 2475 | Kr. 2,036 | Kr. 50,90 |
| 2500 + | Kr. 1,734 | Kr. 43,35 |
*price indicative
- RS Stock No.:
- 787-9121
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-323 | |
| Series | Si1308EDL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.185Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-323 | ||
Series Si1308EDL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.185Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Height 1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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