Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr.145 63 

(exc. VAT)

Kr.182 04 

(inc. VAT)

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In Stock
  • 45 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 29,126Kr. 145,63
50 - 120Kr. 27,364Kr. 136,82
125 - 245Kr. 24,756Kr. 123,78
250 - 495Kr. 23,314Kr. 116,57
500 +Kr. 21,85Kr. 109,25

*price indicative

Packaging Options:
RS Stock No.:
787-9367
Mfr. Part No.:
SIRA00DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

147nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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