Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

Kr. 96,10

(exc. VAT)

Kr. 120,10

(inc. VAT)

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Units
Per unit
Per Tape*
5 - 45Kr. 19,22Kr. 96,10
50 - 245Kr. 16,314Kr. 81,57
250 - 495Kr. 13,476Kr. 67,38
500 - 1245Kr. 12,652Kr. 63,26
1250 +Kr. 11,92Kr. 59,60

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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