Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3
- RS Stock No.:
- 812-3233
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.180 76
(exc. VAT)
Kr.225 96
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 9 520 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 9,038 | Kr. 180,76 |
| 200 - 480 | Kr. 6,961 | Kr. 139,22 |
| 500 - 980 | Kr. 5,875 | Kr. 117,50 |
| 1000 - 1980 | Kr. 5,423 | Kr. 108,46 |
| 2000 + | Kr. 4,519 | Kr. 90,38 |
*price indicative
- RS Stock No.:
- 812-3233
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | Si4599DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.045Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 4 mm | |
| Standards/Approvals | JEDEC JS709A, RoHS | |
| Height | 1.55mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series Si4599DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.045Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 4 mm | ||
Standards/Approvals JEDEC JS709A, RoHS | ||
Height 1.55mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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