Vishay SiR416DP N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3
- RS Stock No.:
- 814-1272
- Mfr. Part No.:
- SIR416DP-T1-GE3
- Brand:
- Vishay
Get a bulk buy discount
Add 100 more to save 5%
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 124,70
(exc. VAT)
Kr. 155,90
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 09 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | Kr. 12,47 | Kr. 124,70 | - |
| 100 - 240 | Kr. 11,737 | Kr. 117,37 | 5% |
| 250 - 490 | Kr. 10,593 | Kr. 105,93 | 15% |
| 500 - 990 | Kr. 9,964 | Kr. 99,64 | 20% |
| 1000 + | Kr. 9,346 | Kr. 93,46 | 25% |
*price indicative
- RS Stock No.:
- 814-1272
- Mfr. Part No.:
- SIR416DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiR416DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 700mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Width | 5.26mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiR416DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 700mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Width 5.26mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR416DP N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- onsemi NVTFS015N04C N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN NVTFS015N04CTAG
- onsemi Dual 2 N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- ROHM RQ3 Type P-Channel MOSFET 40 V Enhancement, 8-Pin HSMT-8 RQ3G270BJFRATCB
- Vishay E N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay E N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay ThunderFET N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC SI4090DY-T1-GE3