Vishay SiR416DP Type N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3

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Subtotal (1 pack of 10 units)*

Kr.127 67 

(exc. VAT)

Kr.159 59 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 12,767Kr. 127,67
100 - 240Kr. 12,023Kr. 120,23
250 - 490Kr. 10,857Kr. 108,57
500 - 990Kr. 10,216Kr. 102,16
1000 +Kr. 9,587Kr. 95,87

*price indicative

Packaging Options:
RS Stock No.:
814-1272
Mfr. Part No.:
SIR416DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

40V

Series

SiR416DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69W

Typical Gate Charge Qg @ Vgs

59nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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