Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3

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Subtotal (1 pack of 10 units)*

Kr.225 71 

(exc. VAT)

Kr.282 14 

(inc. VAT)

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  • Shipping from 02. juni 2026
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Units
Per unit
Per Pack*
10 - 40Kr. 22,571Kr. 225,71
50 - 90Kr. 21,21Kr. 212,10
100 - 240Kr. 19,173Kr. 191,73
250 - 490Kr. 18,064Kr. 180,64
500 +Kr. 16,931Kr. 169,31

*price indicative

Packaging Options:
RS Stock No.:
815-2635
Mfr. Part No.:
SIHF640L-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

SiHF640L

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

130W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

2V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Height

11.3mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


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