Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.605 40 

(exc. VAT)

Kr.756 75 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50Kr. 12,108Kr. 605,40
100 - 200Kr. 11,381Kr. 569,05
250 - 450Kr. 10,291Kr. 514,55
500 +Kr. 9,687Kr. 484,35

*price indicative

RS Stock No.:
165-6089
Mfr. Part No.:
SIHF640L-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-262

Series

SiHF640L

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

11.3mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links