Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50N04S410ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

14 nC @ 10 V

Length

6.73mm

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.41mm