Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD50N03S4L06ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2500 units)*

Kr. 10 625,00

(exc. VAT)

Kr. 13 275,00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
2500 - 2500Kr. 4,25Kr. 10 625,00
5000 - 10000Kr. 4,141Kr. 10 352,50
12500 +Kr. 4,038Kr. 10 095,00

*price indicative

RS Stock No.:
857-4590
Mfr. Part No.:
IPD50N03S4L06ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.41mm

RoHS Status: Exempted

Related links