Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD50N03S4L06ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Transistor Material

Si

Typical Gate Charge @ Vgs

24 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

6.22mm

Height

2.41mm

Minimum Operating Temperature

-55 °C