Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr. 204,15

(exc. VAT)

Kr. 255,20

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Pack*
25 - 100Kr. 8,166Kr. 204,15
125 - 475Kr. 6,292Kr. 157,30
500 - 1225Kr. 5,618Kr. 140,45
1250 +Kr. 4,418Kr. 110,45

*price indicative

Packaging Options:
RS Stock No.:
827-5081
Mfr. Part No.:
IPD088N06N3GBTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.41mm

RoHS Status: Not Applicable

Related links