Infineon OptiMOS™ 3 N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK IPD220N06L3GBTMA1

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Subtotal (1 pack of 50 units)*

Kr. 501,15

(exc. VAT)

Kr. 626,45

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50Kr. 10,023Kr. 501,15
100 - 450Kr. 6,453Kr. 322,65
500 - 950Kr. 6,138Kr. 306,90
1000 - 2450Kr. 5,218Kr. 260,90
2500 +Kr. 5,094Kr. 254,70

*price indicative

Packaging Options:
RS Stock No.:
110-7435
Mfr. Part No.:
IPD220N06L3GBTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

39.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Forward Diode Voltage

1.2V

RoHS Status: Not Applicable

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