Infineon OptiMOS™ N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK IPD30N03S2L10ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

6.22mm

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.41mm