Infineon OptiMOS™ -T2 N-Channel MOSFET, 40 A, 30 V, 3-Pin DPAK IPD40N03S4L08ATMA1
- RS Stock No.:
- 857-4596
- Mfr. Part No.:
- IPD40N03S4L08ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
Kr. 11 020,00
(exc. VAT)
Kr. 13 775,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | Kr. 4,408 | Kr. 11 020,00 |
| 5000 - 10000 | Kr. 4,295 | Kr. 10 737,50 |
| 12500 + | Kr. 4,187 | Kr. 10 467,50 |
*price indicative
- RS Stock No.:
- 857-4596
- Mfr. Part No.:
- IPD40N03S4L08ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
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