Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal 50 units (supplied on a continuous strip)*

Kr.599 45 

(exc. VAT)

Kr.749 30 

(inc. VAT)

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50 - 90Kr. 11,989
100 - 240Kr. 11,108
250 - 490Kr. 10,342
500 +Kr. 9,598

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Packaging Options:
RS Stock No.:
915-5011P
Mfr. Part No.:
IRFR4510TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

143W

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

175°C

Length

6.73mm

Width

7.49 mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

Distrelec Product Id

304-44-463

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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