Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- RS Stock No.:
- 133-9899
- Mfr. Part No.:
- IDH08G120C5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr. 41,64
(exc. VAT)
Kr. 52,05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 140 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 41,64 |
| 10 - 24 | Kr. 39,58 |
| 25 - 49 | Kr. 37,87 |
| 50 - 99 | Kr. 36,15 |
| 100 + | Kr. 33,63 |
*price indicative
- RS Stock No.:
- 133-9899
- Mfr. Part No.:
- IDH08G120C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 22.8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH08G120C5 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.85V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Peak Reverse Current Ir | 210μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Width | 4.5 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 22.8A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH08G120C5 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.85V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Peak Reverse Current Ir 210μA | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Width 4.5 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Related links
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247
- Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247
- Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220
