STMicroelectronics 650 V 8 A Diode 2-Pin TO-220
- RS Stock No.:
- 164-6971
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.985 45
(exc. VAT)
Kr.1 231 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 29. juni 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 19,709 | Kr. 985,45 |
| 100 - 200 | Kr. 19,196 | Kr. 959,80 |
| 250 + | Kr. 18,723 | Kr. 936,15 |
*price indicative
- RS Stock No.:
- 164-6971
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Diameter | 3.75 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Peak Reverse Current Ir 750μA | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Diameter 3.75 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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