IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2486 Products showing for IGBTs

    Infineon
    -
    -
    -
    35.7 W
    -
    -
    PG-TO220-3
    -
    -
    -
    -
    -
    -
    onsemi
    120 A
    650 V
    ±20V
    600 W
    -
    -
    TO-3PN
    Through Hole
    N
    3
    -
    Single
    15.8 x 5 x 20.1mm
    Infineon
    80 A
    600 V
    ±20V
    428 W
    -
    -
    TO-247
    Through Hole
    -
    3
    -
    Single
    16.03 x 21.1 x 5.16mm
    Infineon
    54 A
    1200 V
    ±20V
    215 W
    -
    3 Phase Bridge
    AG-EASY2B-1
    Panel Mount
    N
    -
    -
    3 Phase
    56.7 x 48 x 12mm
    onsemi
    120 A
    600 V
    ±20V
    600 W
    -
    -
    TO-247AB
    Through Hole
    N
    3
    -
    Single
    15.6 x 4.7 x 20.6mm
    Infineon
    27 A
    600 V
    +/-20V
    94 W
    -
    -
    Module
    Panel Mount
    -
    -
    -
    -
    -
    Infineon
    900 A
    1200 V
    ±20V
    4.3 kW
    1
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    53 A
    600 V
    ±20V
    200 W
    1
    -
    TO-247
    Through Hole
    N
    3
    30kHz
    Single
    16.13 x 5.21 x 21.1mm
    STMicroelectronics
    6 A
    600 V
    ±20V
    20 W
    -
    -
    TO-220FP
    Through Hole
    N
    3
    1MHz
    Single
    10.4 x 4.6 x 16.4mm
    ROHM
    78 A
    650 V
    ±30V
    214 W
    1
    Single
    TO-247GE
    Through Hole
    N
    3
    -
    -
    -
    STMicroelectronics
    6 A
    1200 V
    ±20V
    25 W
    -
    -
    TO-220FP
    Through Hole
    N
    3
    1MHz
    Single
    10.4 x 4.6 x 16.4mm
    Infineon
    840 A
    1700 V
    ±20V
    3.35 kW
    1
    -
    -
    -
    -
    -
    -
    -
    -
    IXYS
    100 A
    1200 V
    ±20V
    450 W
    -
    -
    SOT-227B
    Surface Mount
    N
    4
    1MHz
    Single
    38.2 x 25.07 x 9.6mm
    STMicroelectronics
    25 A
    1350 V
    ±20V
    340 W
    1
    Single Collector, Single Emitter, Single Gate
    TO-247
    Through Hole
    Bi-Directional
    3
    -
    -
    -
    Mitsubishi Electric
    20
    600 V
    -
    -
    6
    Array
    PowerDIP Module
    Through Hole
    N
    -
    -
    3 Phase
    -
    ROHM
    85 A
    650 V
    ±30V
    277 W
    1
    Single Collector, Single Emitter, Single Gate
    TO-247GE
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    25 A
    1350 V
    ±20V
    340 W
    1
    Single Collector, Single Emitter, Single Gate
    TO-247
    Through Hole
    Bi-Directional
    3
    -
    -
    -
    onsemi
    80 A
    1200 V
    ±20V
    298 W
    -
    -
    D2PAK (TO-263)
    Surface Mount
    N
    3
    1MHz
    Single
    10.67 x 11.33 x 4.83mm
    Infineon
    825 A
    3300 V
    -
    2400 kW
    2
    Single
    AG-IHVB130
    -
    -
    -
    -
    -
    -
    Infineon
    700 A
    1200 V
    ±20V
    3.9 kW
    -
    Single
    AG-62MM-2
    Panel Mount
    N
    -
    -
    Single
    106.4 x 61.4 x 36.5mm
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