STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

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Subtotal (1 pack of 5 units)*

Kr.139 34 

(exc. VAT)

Kr.174 175 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 27,868Kr. 139,34
50 - 95Kr. 26,128Kr. 130,64
100 - 245Kr. 20,912Kr. 104,56
250 - 495Kr. 17,434Kr. 87,17
500 +Kr. 15,352Kr. 76,76

*price indicative

Packaging Options:
RS Stock No.:
204-9868
Mfr. Part No.:
STGB30H65DFB2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

D2PAK (TO-263)

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution

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